OBSERVING ACTIVE AREA ON NATIVE OXIDE GROWTH: MICROFABRICATION & FAILURE ANALYSIS LAB

Abstract

Native oxide is a very thin layer of silicon dioxide (SiO2) that formed on the surface of a silicon wafer whenever the wafer is exposed to air under ambient conditions. Native oxide growth is also affected by the environmental, humidity conditions, the fluids implied on the wafer and other parameters. To avoid the native oxide growth at its climax time, and the degradation of the good properties of silicon thin film, the research has been done to measure the native oxide growth in Microfabrication and Failure Analysis Laboratory at University Malaysia Perlis, UniMAP during peak hour. Peak hours refer to the time where the maximum number of students using the lab. Silicon bare wafer is used as sample to test the native oxide growth on surface. The measurement and observation on the growth were done in afternoon and evening by using Spectrophotometer. As a results, Microfabrication Laboratory (Changing Room) exhibits the most active native oxide formation in both afternoon and evening.