NUMERICAL ANALYSIS OF EMITTER AND BASE LAYER DOPING CONCENTRATION FOR SILICON SOLAR CELLS BASED ON ONE-DIMENSIONAL MODELS

Abstract

Research into solar cell efficiency is a dynamic and crucial field. Scientists and researchers are exploring a variety of approaches to maximize the power output of solar cells making it more competitive with other energy sources. Some of the key areas that are effectively increase the power conversion efficiency of the solar cell: enhancing the absorption of incident sunlight on the silicon surface by reducing the reflection loss and improving the photovoltaic effect by reducing the electrical loss. This study will be focused on enhancing the photovoltaic effect by modifying the parameters which are the doping concentrations of emitter and base layers. The doping concentrations of emitter and base layers will range from moderate to heavy doping level. Numerical modelling was employed to design and analyse the solar cell model. The results indicate that the highest efficiency of 13.4% to 13.5% for the designed solar cell is achieved with an emitter doping concentration of 1x10¹⁸ cm^-3 and a base doping concentration ranging from 3x10¹⁹ cm^-3 to 4x10¹⁹ cm^-3. By carefully controlling and balancing the doping levels in emitter with those in the base layer, the solar cell can be optimized for better performance and efficiency.