Optimal Effective Carrier Barrier Height of the AlGaN-based Deep-Ultraviolet Light-Emitting Diode through the Wedge-shaped Electron Blocking Layer

Abstract

This work demonstrates the enhancement of luminescence intensity of aluminium gallium nitride (AlGaN)-based deep-ultraviolet light-emitting diode (DUV-LED) via the wedge-shaped electron blocking layer (W-EBL). The AlGaN-based DUV-LED suffers from low luminescence intensity emitted by the device due to electron overflow and minimal hole injection. Utilising the W-EBL in the epitaxy layers with an optimal effective barrier height structure can reduce the overflowing electron and increase the transportation of hole into the active region. The increment in confinement of carrier in the multiple quantum well (MQW) increased the radiative recombination rates and boosted the luminescence intensity of the DUV-LED by 48%.